Please use this identifier to cite or link to this item:
Title: Investigation of optical and electrical properties of Cobalt-doped Ge-Sb-S thin film
Authors: Musa, Ishaq
Qamhieh, Zaid
Mahmoud, Saleh
El-Shaer, Mohamad
Ayesh, Ahmad
Qamhieh, Naser
Keywords: Amorphous chalcogenides
Cobalt doping
Optical band gap
Raman spectroscopy
Capacitance measurements
Issue Date: Mar-2019
Publisher: Elsevier-Results in Physics
Series/Report no.: 13;102218
Abstract: Amorphous Germanium Antimony Sulphide (Ge-Sb-S) doped with Cobalt (Co) have been deposited on glass substrates by thermal evaporation technique on a glass substrate. The films deposited onto glass substrates are characterized by Energy Dispersive X-ray Fluorescence Spectrometer, UV–VIS spectrophotometer, Raman spectroscopy, and Capacitance-Voltage Keithley meter. The optical band gap was calculated from the UV–Visible spectrum and found to be 2.05 eV. Raman spectroscopy measurements reveal that a wide band spectrum from 300 to 410 cm−1 centered at 355 cm−1. The Raman shift peaks at 325 cm−1 and 350 cm−1 are as-signed to the bond stretching mode Sb-S and Ge-S, respectively. In addition, from the obtained Raman spectra it is concluded that the presence of Co doped with Ge-Sb-S. The capacitance and conductance versus voltage measurements were performed at different temperatures. The results show a slight increase in the capacitance with temperature and it reaches a maximum value around 150 °C, and eventually it becomes negative. This behavior is interpreted in terms of the nucleation growth process and the thermally activated conduction process with measured activation energy of 0.79 eV.
ISSN: 2211-3797
Appears in Collections:Applied science faculty

Files in This Item:
File Description SizeFormat 
1-s2.0-S2211379719305431-main (3).pdf926.05 kBAdobe PDFThumbnail

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.